b'Phases with (2\\xd7n) structure (6<10) can be formed on Si(100) by rapid quenching from high temperatures. The nominal (2\\xd77) phase has been investigated by high-resolution low-energy electron diffraction. The structure involves two atomic levels, is metastable, and decays with first-order kinetics. The structure can be explained by ordering of excess missing-dimer defects, which apparently are present on the surface with any of the standard surface preparation techniques for Si(100).'