Crystal growth of PbTe and (Pb, Sn)Te by the bridgman method and by THM
b'Synthesis and growth of PbTe and (Pb, Sn)Te single crystals by the Bridgman method and by the Travelling Heater Method (THM) from Te-rich solutions are described. It is to be seen from comparative investigations that seeded THM growth reproducibly provides oriented single-crystalline ingots free of low-angle grain boundaries and with etch pit densities of 8-12 \\xd7 104 cm-2. All the materials were p-type with carrier concentrations from 1 to 2 \\xd7 1018 cm-3.'